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APT75GP120B2
1200V
POWER MOS 7 IGBT
T-MaxTM
(R)
The POWER MOS 7(R) IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies.
G
C
* Low Conduction Loss * Low Gate Charge * Ultrafast Tail Current shutoff
* 100 kHz operation @ 800V, 20A * 50 kHz operation @ 800V, 38A * RBSOA rated
E
C G E
MAXIMUM RATINGS
Symbol VCES VGE VGEM I C1 I C2 I CM RBSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Gate-Emitter Voltage Transient Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 110C Pulsed Collector Current
1 7
All Ratings: TC = 25C unless otherwise specified.
APT75GP120B2 UNIT
1200 20 30 100 91 300 300A @ 960V 1042 -55 to 150 300
Watts C Amps Volts
@ TC = 25C
Reverse Bias Safe Operating Area @ TJ = 150C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 1000A) Gate Threshold Voltage (VCE = VGE, I C = 2.5mA, Tj = 25C) MIN TYP MAX UNIT
1200 3 4.5 3.3 3.0 1000
2
6 3.9
Volts
Collector-Emitter On Voltage (VGE = 15V, I C = 75A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 75A, Tj = 125C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25C)
2
I CES I GES
A nA
5-2003 050-7424 Rev B
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125C) Gate-Emitter Leakage Current (VGE = 20V)
5000 100
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres VGEP Qg Qge Qgc RBSOA Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
3
APT75GP120B2
Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCE = 600V I C = 75A TJ = 150C, R G = 5, VGE = 15V, L = 100H,VCE = 960V Inductive Switching (25C) VCC = 600V VGE = 15V I C = 75A
4 5
MIN
TYP
MAX
UNIT
7035 460 80 7.5 320 50 140 300 20 40 163 56 1620 4100 2500 20 40 244 115 1620 5850 4820
MIN TYP MAX UNIT C/W gm ns ns A nC V pF
Gate-Emitter Charge Gate-Collector ("Miller ") Charge Reverse Bias Safe Operating Area
td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Symbol RJC RJC WT
Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy
R G = 5 TJ = +25C
Turn-on Switching Energy (Diode) Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy
4 6
J
Inductive Switching (125C) VCC = 600V VGE = 15V I C = 75A R G = 5
5
Turn-on Switching Energy (Diode) Turn-off Switching Energy
6
TJ = +125C
J
THERMAL AND MECHANICAL CHARACTERISTICS
Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight
.12 N/A 5.90
1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.) 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. A Combi device is used for the clamping diode as shown in the Eon2 test circuit. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 Continuous current limited by package lead temperature.
APT Reserves the right to change, without notice, the specifications and information contained herein.
050-7424
Rev B
5-2003
TYPICAL PERFORMANCE CURVES
160 140
IC, COLLECTOR CURRENT (A)
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
APT75GP120B2
160 140
IC, COLLECTOR CURRENT (A)
VGE = 10V. 250s PULSE TEST <0.5 % DUTY CYCLE
120 100 80 60 40 20 0 0 1 2 3 4 5 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) TC=25C TC=125C
120 100 80 60 40 20 0 0 1 2 3 4 5 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) TC=25C TC=125C
FIGURE 1, Output Characteristics(VGE = 15V) 250
VGE, GATE-TO-EMITTER VOLTAGE (V)
250s PULSE TEST <0.5 % DUTY CYCLE
FIGURE 2, Output Characteristics (VGE = 10V) 16 14 12 10 8 6 4 2 0 0 50 100 150 200 250 300 GATE CHARGE (nC) FIGURE 4, Gate Charge 350
IC = 75A TJ = 25C
IC, COLLECTOR CURRENT (A)
200
VCE=240V VCE=600V
150
TJ = -55C
100
TJ = 25C TJ = 125C
VCE=960V
50
0
0
2 3 45 67 8 9 10 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics IC = 150A
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
1
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
5
5 IC = 150A IC = 75A 3 IC = 37.5A 2.0
4 IC = 75A 3 IC = 37.5A 2
4
1
1.0
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.2
0
6
25 50 75 100 125 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 300
0
0
BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VOLTAGE (NORMALIZED)
IC, DC COLLECTOR CURRENT(A)
1.15 1.10 1.05 1.0 0.95 0.9 0.85 0.8 -50
250
200
150
50 0 -50
050-7424
-25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Breakdown Voltage vs. Junction Temperature
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature
Rev B
5-2003
100
APT75GP120B2
40
td (OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns)
350
VGE =15V,TJ=125C
300 250 200 150 100 50 0 VCE = 600V RG = 5 L = 100 H
VGE =10V,TJ=25C VGE =15V,TJ=25C VGE =10V,TJ=125C
30
VGE= 10V
20
VGE= 15V
10
VCE = 600V TJ = 25C or 125C RG = 5 L = 100 H
0 20 40 60 80 100 120 140 160 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 120 100
tr, RISE TIME (ns)
RG =5, L = 100H, VCE = 600V TJ = 25 or 125C,VGE = 10V
0
0 20 40 60 80 100 120 140 160 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 160
RG =5, L = 100H, VCE = 600V
140 TJ = 125C, VGE = 10V or 15V 120
80
tf, FALL TIME (ns)
100 80 60 40
60 40 20 0 10 40 70 100 130 160 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 14000
TJ = 25 or 125C,VGE = 15V
20 0
TJ = 25C, VGE = 10V or 15V
10 40 70 100 130 160 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 12000
EOFF, TURN OFF ENERGY LOSS (J)
VCE = 600V L = 100 H RG = 5
EON2, TURN ON ENERGY LOSS (J)
12000 10000 8000 6000 4000 2000
VCE = 600V L = 100 H RG = 5
TJ =125C, VGE=15V
10000
TJ =125C,VGE=10V
TJ = 125C, VGE = 10V or 15V
8000
6000
TJ = 25C, VGE=15V
4000
2000 0
TJ = 25C, VGE = 10V or 15V
0 10 40 70 100 130 160 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 20000
SWITCHING ENERGY LOSSES (J)
VCE = 600V VGE = +15V TJ = 125C
TJ = 25C, VGE=10V
0 20 40 60 80 100 120 140 160 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current 15000
SWITCHING ENERGY LOSSES (J)
VCE = 600V VGE = +15V RG = 5
Eon2 150A Eoff 150A
Eon2 150A
12500 10000 7500 5000 2500 0
15000
10000 Eon2 75A 5000 Eon2 37.5A Eoff 37.5A 10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance 0 Eoff 75A
Eoff 150A Eon2 75A
5-2003
Eoff 75A Eoff 37.5A 0
Eon2 37.5A
Rev B
050-7424
25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
TYPICAL PERFORMANCE CURVES
20,000 10,000 Cies
IC, COLLECTOR CURRENT (A)
APT75GP120B2
350 300 250 200 150 100 50
C, CAPACITANCE ( F)
P
1,000 500 Coes
100 50
Cres
0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage
10
0 100 200 300 400 500 600 700 800 900 1000 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18, Minimim Switching Safe Operating Area
0
0.14 0.12 0.9 0.10 0.7 0.08 0.5 0.06 0.04 0.02 0 0.3 Note:
PDM t1 t2
ZJC, THERMAL IMPEDANCE (C/W)
0.1 0.05 SINGLE PULSE 10-5 10-4
Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19A, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
RC MODEL Junction temp (C) 0.00792 0.00354F
140 100
FMAX, OPERATING FREQUENCY (kHz)
50
Power (watts)
0.0475
0.0307F
0.0656 Case temperature (C)
0.361F
10
TJ = 125C TC = 75C D = 50 % VCE = 800V RG = 5
FIGURE 19B, TRANSIENT THERMAL IMPEDANCE MODEL
.3
10
30 50 70 90 110 130 150 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current
Fmax = min(f max1 , f max 2 ) f max1 = f max 2 = Pdiss = 0.05 t d (on) + t r + t d(off ) + t f
5-2003 050-7424 Rev B
Pdiss - Pcond E on 2 + E off
TJ - TC R JC
APT75GP120B2
APT60DF120
10% Gate Voltage td(on) TJ = 125 C
V CC
IC
V CE
Collector Voltage
tr
A
90%
D.U.T.
5% Collector Current 10%
5%
Figure 21, Inductive Switching Test Circuit
Switching Energy
Figure 22, Turn-on Switching Waveforms and Definitions
90%
VTEST *DRIVER SAME TYPE AS D.U.T.
Gate Voltage td(off) tf Collector Voltage TJ = 125 C
A
90%
V CE IC 100uH V CLAMP
10% 0 Collector Current
B
A DRIVER* D.U.T.
Switching Energy
Figure 23, Turn-off Switching Waveforms and Definitions
Figure 24, EON1 Test Circuit
T-MAXTM (B2) Package Outline
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
Collector (Cathode)
20.80 (.819) 21.46 (.845)
4.50 (.177) Max.
2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084)
5-2003
0.40 (.016) 0.79 (.031)
19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055)
Gate Collector Emitter
Rev B
2.21 (.087) 2.59 (.102)
050-7424
5.45 (.215) BSC 2-Plcs.
Dimensions in Millimeters and (Inches)
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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